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  • Mike Falter

1200V SiC FET in TO247-4 Packaging Offers Higher Power Density

Diodes Incorporated has announced a new 1200 V SiC MOSFET in a small TO247-4 package. Along with the high withstand voltage, the new MOSFET can handle currents of just over 37A. With heat sinking, the power switch can dissipate up to 208W with a low on-resistance of just 80mΩ.

EV traction inverter circuit, Image sourced from Diodes Incorporated

The power density of the TO247-4 package allows for a more compact circuit design which translates to a smaller, lighter, and potentially less expensive form factor. For electric vehicles and other e-mobility applications, less weight means longer ranges, smaller battery packs, and faster charging times.

The full article is available here:

Industry-first 1200V SiC FET Offers Higher Power Density


Funding Updates and Other News

Haven Energy Raises $4.2M in Seed Funding Haven Energy is a climate technology company that focuses on home energy storage. The company guides homeowners through selecting, quoting and financing a home battery system, pairing homeowners with qualified and vetted electricians to perform the installation

Someone once told me that “we have spent several centuries pulling carbon out of the ground and putting it up into the atmosphere and now we need to focus on pulling carbon out of the atmosphere and putting it back into the ground.” Noya receives $11M in funding from USV for Direct Air Capture solution


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