Diodes Incorporated has announced a new 1200 V SiC MOSFET in a small TO247-4 package. Along with the high withstand voltage, the new...

While the latest high voltage, wide bandgap power FET solutions like silicon carbide (SiC) and Gallium Nitride (GaN), used in EV OBCs,...

V2G reverses the traditional role of the EV charger by allowing an EV to return spare power from its battery to the grid, so utilities...